TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 2
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TPCP8101(TE85L,F,M
Manufacturer Part Number
TPCP8101(TE85L,F,M
Description
MOSFET P-CH 20V 5.6A 2-3V1K
Manufacturer
Toshiba
Datasheet
1.TPCP8101TE85LFM.pdf
(7 pages)
Specifications of TPCP8101(TE85L,F,M
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
19nC @ 5V
Input Capacitance (ciss) @ Vds
1550pF @ 10V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
2-3V1K
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
DD
= -16 V, T
Characteristics
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
ch
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= -5.6 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8101
2006-11-17