TPCP8101(TE85L,F,M Toshiba, TPCP8101(TE85L,F,M Datasheet - Page 2

• Manufacturer Part Number: TPCP8101(TE85L,F,M
• Description: MOSFET P-CH 20V 5.6A 2-3V1K
• Manufacturer: Toshiba

Specifications of TPCP8101(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 840mW
• Mounting Type: Surface Mount
• Package / Case: 2-3V1K
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code (three digits):
DD
= -16 V, T
Characteristics
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
ch
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
148.8
Max
74.4
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= -5.6 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8101
2006-11-17