IXKK85N60C IXYS, IXKK85N60C Datasheet - Page 3

• Manufacturer Part Number: IXKK85N60C
• Description: MOSFET N-CH 600V 85A TO-264
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKK85N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 650nC @ 10V
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 85 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 85
• Rds(on), Max, Tj=25°c, (?): 0.036
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 500
• Trr, Max, (ns): -
• Trr, Typ, (ns): 580
• Pd, (w): 700
• Rthjc, Max, (k/w): 0.18
• Visol, Rms, (v): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
100
100
3.7
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
4
1
0
0
0
t
V
t
p = 300µs
40
p = 300µs
t
GS
0.5
p = 300µs
Fig. 3. Output Characteristics
1
Fig. 1. Output Characteristics
Fig. 5. R
= 10V
80
1
2
I
D100
120
@ 125 Deg. C
V
DS(on)
I
@ 25 Deg. C
D
V
D S
V
Value vs. I
1.5
GS
- Amperes
D S
160
3
- Volts
Norm alized to
= 10V
- Volts
6V
5V
V
200
T
GS
J
2
4
= 125ºC
= 10V
4.5V
4V
240
D
T
5V
J
2.5
= 25ºC
5
280
4.5V
4V
3
6
320
360
3.5
7
100
360
320
280
240
200
160
120
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
90
80
70
60
50
40
30
20
10
80
40
1
0
0
Fig. 2. Extended Output Characteristics
-50
-50
0
Fig. 4. R
V
t
t
p = 300µs
-25
-25
p = 300µs
2
GS
Fig. 6. Drain Current vs. Case
vs. Junction Tem perature
= 10V
DS(on)
4
T
0
0
T
C
J
- Degrees Centigrade
- Degrees Centigrade
@ 25 deg. C
Norm alized to I
Tem perature
6
25
25
V
I
D S
8
D
= 60A
50
50
V
- Volts
IXKK 85N60C
GS
10
= 10V
75
75
7V
12
I
D
D100
= 30A
100
100
14
6V
5V
Value
125
125
16
20100315c
150
150
3 - 4
18