IXKK85N60C IXYS, IXKK85N60C Datasheet
IXKK85N60C
Manufacturer Part Number
IXKK85N60C
Description
MOSFET N-CH 600V 85A TO-264
Manufacturer
IXYS
Series
CoolMOS™r
Datasheet
1.IXKK85N60C.pdf
(4 pages)
Specifications of IXKK85N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
650nC @ 10V
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
85
Rds(on), Max, Tj=25°c, (?)
0.036
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
500
Trr, Max, (ns)
-
Trr, Typ, (ns)
580
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Visol, Rms, (v)
-
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXKK85N60C
Manufacturer:
NXP
Quantity:
5 000
Part Number:
IXKK85N60C
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
CoolMOS
Low R
Superjunction MOSFET
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
MOSFET
Symbol
V
V
I
I
E
E
dV/dt
Symbol
R
V
I
I
C
C
C
Q
Q
Q
t
t
t
t
R
DSS
GSS
D25
D100
d(on)
r
d(off)
f
GS(th)
GS
DSS
AS
AR
DSon
iss
oss
rss
thJC
g
gs
gd
Pulse test, t < 300 µs, duty cycle d < 2%
DSon
, high V
Conditions
T
T
T
single pulse I
repetitive
MOSFET dV/dt ruggedness V
Conditions
V
V
V
V
V
f = 1 MHz
V
V
I
D
VJ
C
C
GS
DS
DS
GS
GS
GS
GS
= 85 A; R
= 25°C
= 100°C
= 25°C
= V
= 10 V; I
= V
= ± 20 V; V
= 0 V; V
= 0 to 10 V; V
= 13 V; V
DSS
GS
™ 1)
; I
; V
DSS
D
DS
G
D
= 5.4 mA
GS
DS
= 1.0 Ω
= I
I
= 25 V
D
D
DS
= 0 V
= 380 V
Power MOSFET
= 10 A; T
= 20 A; T
D100
= 0 V
DS
= 350 V; I
C
C
= 25°C
= 25°C
T
T
VJ
VJ
D
DS
(T
= 25°C
= 125°C
= 85 A
= 0...480 V
VJ
= 25°C, unless otherwise specified)
min.
2
Characteristic Values
Maximum Ratings
13.6
typ.
290
500
240
110
4.4
30
50
20
27
10
G
1800
max.
±200
0.18
± 20
600
500
640
36
50
85
55
50
1
4
S
V/ns
D
K/W
mW
mJ
mJ
nC
nC
nC
µA
µA
nA
nF
nF
pF
ns
ns
ns
ns
V
V
A
A
V
V
I
R
TO-264
Features
• 3
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
D25
MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
- low thermal resistance
DSS
DS(on) max
rd
inductive switching (UIS)
due to reduced chip thickness
E72873
generation CoolMOS
1)
G
CoolMOS
Infineon Technologies AG.
D
S
IXKK 85N60C
= 600 V
= 85 A
= 36 mΩ
™
is a trademark of
™ 1)
power
20100315c
1 - 4
tab
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IXKK85N60C Summary of contents
Page 1
... d(off thJC Pulse test, t < 300 µs, duty cycle d < 2% IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved G Maximum Ratings 600 ± 25°C 1800 C = 25° 0...480 V DS Characteristic Values (T = 25° ...
Page 2
... T stg M mounting torque d Symbol Conditions R with heatsink compound thCH Weight TO-264 Outline IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. max. 85 250 1.2 580 ...
Page 3
... I - Amperes D IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 360 320 280 240 200 4.5V 160 120 4V 2 2.5 3 3.5 2 10V ...
Page 4
... T = 125º 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 Volts IXYS reserves the right to change limits, test conditions and dimensions. DS © 2010 IXYS All rights reserved 180 160 140 120 100 4 25º 0 ...