STW77N65M5 STMicroelectronics, STW77N65M5 Datasheet - Page 8

• Manufacturer Part Number: STW77N65M5
• Description: MOSFET N-CH 650V 69A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW77N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38 mOhm @ 34.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 69A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9800pF @ 100V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 69 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10589-5; STW77N65M5

Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/13
Figure 14. Switching losses vs gate resistance
(µJ)
400
300
200
100
600
500
E
0
0
(1)
V
I
L=50µH
D
DD
=25A
=400V
10
20
30
Eon
40
Eoff
Doc ID 15322 Rev 2
AM04973v1
R
G
(Ω)
STW77N65M5