IXFX20N120P IXYS, IXFX20N120P Datasheet - Page 2

• Manufacturer Part Number: IXFX20N120P
• Description: MOSFET N-CH 1200V 20A PLUS247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFX20N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 570 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 193nC @ 10V
• Input Capacitance (ciss) @ Vds: 11100pF @ 25V
• Power - Max: 780W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.57 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.57
• Ciss, Typ, (pf): 11100
• Qg, Typ, (nc): 193
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.160
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1:
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Gate input resistance
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
G
R
= I
= 10A, -di/dt = 100A/μs
= 20V, I
= 100V, V
= 0V, V
= 10V, V
= 1Ω (External)
= 0V
= 10V, V
S
, V
GS
D
= 0V, Note 1
DS
= 0.5 • I
DS
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
= 0V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
T
J
D25
D25
= 25°C unless otherwise specified)
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
10
Characteristic Values
1.60
Typ.
0.15
0.84
11.1
600
193
Typ.
16
60
49
45
72
70
74
85
6,162,665
6,259,123 B1
6,306,728 B1
9
0.16
Max.
300
1.5
Max.
20
80
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
μC
nC
nC
nC
pF
pF
nF
ns
ns
ns
ns
ns
Ω
A
S
A
A
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
PLUS247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
TM
20.80
15.75
19.81
25.91
19.81
20.32
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
(IXFX) Outline
Millimeter
5.45 BSC
Millimeter
5.46 BSC
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
IXFK20N120P
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXFX20N120P
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072