IXFX20N120P IXYS, IXFX20N120P Datasheet

no-image

IXFX20N120P

Manufacturer Part Number
IXFX20N120P
Description
MOSFET N-CH 1200V 20A PLUS247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFX20N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
570 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
193nC @ 10V
Input Capacitance (ciss) @ Vds
11100pF @ 25V
Power - Max
780W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.57 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
20
Rds(on), Max, Tj=25°c, (?)
0.57
Ciss, Typ, (pf)
11100
Qg, Typ, (nc)
193
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
780
Rthjc, Max, (ºc/w)
0.160
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX20N120P
Manufacturer:
IXYS
Quantity:
1 000
Polar
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION,All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque
Mounting force
TO-264
PLUS247
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 1mA
≤ V
= 1mA
= 0.5 • I
DS
DSS
= 0V
, T
(IXFK)
(IXFX)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFK20N120P
IXFX20N120P
1200
20..120 /4.5..27
Min.
3.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10
1200
1200
± 30
± 40
780
150
300
260
20
50
10
15
10
1
6
Max.
± 200
570
6.5
25
5
Nm/lb.in.
N/lb.
V/ns
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
S
= 1200V
= 20A
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
570mΩ Ω Ω Ω Ω
300ns
(TAB)
(TAB)
DS99854B(04/08)

Related parts for IXFX20N120P

IXFX20N120P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION,All rights reserved IXFK20N120P IXFX20N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± ≤ 150° 780 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5.. Characteristic Values Min. Typ. ...

Page 2

... BSC L 19.81 L1 3.81 Q 5.59 R 4.32 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXFK20N120P IXFX20N120P Inches Max. Min. Max. 5.13 .190 .202 2.89 .100 .114 2.10 .079 .083 1.42 .044 .056 2.69 .094 .106 3.09 .114 ...

Page 3

... Fig Normalized to I DS(on) vs. Junction Temperature 2 10V 2.4 GS 2.2 2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFK20N120P IXFX20N120P = 10V 10A Value D = 20A I = 10A D 75 100 125 150 75 100 125 150 ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1.000 C iss 0.100 C oss 0.010 C rss 0.001 0.00001 IXFK20N120P IXFX20N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 600V 10A 10mA 120 160 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 ...

Related keywords