IXTH110N10L2 IXYS, IXTH110N10L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH110N10L2
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH110N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 230
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5291125

© 2010 IXYS CORPORATION, All Rights Reserved
110
100
110
100
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
0
V
GS
0.2
Fig. 5. R
= 10V
0.5
Fig. 1. Output Characteristics @ T
20V
Fig. 3. Output Characteristics @ T
50
0.4
- - - -
1
DS(on)
0.6
100
Normalized to I
1.5
0.8
V
V
Drain Current
GS
GS
I
V
D
V
= 20V
DS
= 20V
DS
- Amperes
14V
12V
10V
14V
12V
10V
150
- Volts
1
- Volts
2
8V
6V
8V
6V
5V
1.2
2.5
D
= 55A Value vs.
200
1.4
T
J
J
J
3
= 25ºC
= 125ºC
= 125ºC
1.6
250
T
3.5
J
1.8
= 25ºC
300
2
4
300
250
200
150
100
120
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
50
80
60
40
20
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
V
2
Fig. 4. R
GS
-25
-25
= 10V
= 20V
14V
12V
4
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
6
Junction Temperature
10V
8V
6V
T
T
Case Temperature
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
8
V
DS
10
50
50
- Volts
IXTH110N10L2
IXTT110N10L2
12
D
75
75
= 55A Value vs.
I
D
= 110A
14
100
100
16
I
J
D
= 25ºC
= 55A
125
125
18
150
150
20