IXTH110N10L2 IXYS, IXTH110N10L2 Datasheet - Page 2

• Manufacturer Part Number: IXTH110N10L2
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH110N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 230
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5291125

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
TO-247
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
F
F
DS
GS
GS
GS
DS
GS
R
G
= I
= 55A, -di/dt = 100A/μs,
= 50V, V
= 10V, V
= 2.2Ω (External)
= 80V, I
= 0V
= 10V, I
= 0V, V
= 10V, V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
GS
D
DS
D
DS
= 3.6A, T
DS
= 0V
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
C
DSS
= 75°C, t
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
p
5,049,961
5,063,307
5,187,117
= 5s
JM
D25
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
45
Characteristic Values
Min.
Min.
360
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
1585
10.5
0.21
19.4
Typ.
Typ.
420
130
260
106
230
Typ.
1.8
2.2
55
28
99
24
52
0.21 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
65
440
110
Max.
1.4
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
W
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
IXTH110N10L2
IXTT110N10L2
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
Tab - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216