STW45NM50 STMicroelectronics, STW45NM50 Datasheet - Page 7

• Manufacturer Part Number: STW45NM50
• Description: MOSFET N-CH 500V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW45NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2760-5

STW45NM50
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Doc ID 8477 Rev 5
Figure 11. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
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