STW35N65M5 STMicroelectronics, STW35N65M5 Datasheet - Page 10

• Manufacturer Part Number: STW35N65M5
• Description: MOSFET N-CH 650V 27A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW35N65M5

• Package / Case: TO-247
• Mounting Type: Through Hole
• Power - Max: 160W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 27A
• Drain To Source Voltage (vdss): 650V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 27 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Package mechanical data
4
10/18
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
Doc ID 15325 Rev 2
STB/F/I/P/W35N65M5
®