IXFH52N50P2 IXYS, IXFH52N50P2 Datasheet - Page 4

• Manufacturer Part Number: IXFH52N50P2
• Description: MOSFET N-CH 500V 52A TO247
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFH52N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Product: MOSFET Gate Drivers
• Rise Time: 10 ns
• Fall Time: 8 ns
• Supply Current: 52 A
• Maximum Power Dissipation: 960 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 46 ns
• Maximum Turn-on Delay Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 52 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 113
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
120
100
100
90
80
70
60
50
40
30
20
10
80
60
40
20
10
0
0
3.0
0.3
0
f
= 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
5
0.5
4.0
10
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
T
4.5
15
J
= 125ºC
0.7
V
V
V
SD
DS
GS
5.0
- Volts
20
- Volts
- Volts
0.8
T
J
= 125ºC
5.5
25
- 40ºC
25ºC
0.9
T
J
= 25ºC
6.0
30
1.0
C iss
C oss
C rss
6.5
35
1.1
1.2
7.0
40
1.00
0.30
0.10
0.01
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
Fig. 13. Maximum Transient Thermal Impedance
V
I
I
10
D
G
DS
= 26A
= 10mA
10
= 250V
Fig. 12. Maximum Transient Thermal Impedance
20
0.001
20
30
Fig. 8. Transconductance
30
40
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
0.01
G
50
- NanoCoulombs
I
D
40
- Amperes
60
50
IXFH52N50P2
IXFT52N50P2
70
0.1
T
J
60
80
= - 40ºC
125ºC
25ºC
90
IXYS REF: F_52N50P2(8J-N45)03-22-10
70
1
100
80
110
120
10
90