IXFH52N50P2 IXYS, IXFH52N50P2 Datasheet - Page 2

• Manufacturer Part Number: IXFH52N50P2
• Description: MOSFET N-CH 500V 52A TO247
• Manufacturer: IXYS
• Series: PolarP2™ HiPerFET™r
• Type: PolarP2 HiPerFETr

Specifications of IXFH52N50P2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Product: MOSFET Gate Drivers
• Rise Time: 10 ns
• Fall Time: 8 ns
• Supply Current: 52 A
• Maximum Power Dissipation: 960 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Maximum Turn-off Delay Time: 46 ns
• Maximum Turn-on Delay Time: 22 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 52 A
• Output Voltage: 500 V
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 52
• Rds(on), Max, Tj=25°c, (?): 0.12
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 113
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
F
F
GS
DS
GS
G
GS
GS
R
= I
= 26A, -di/dt = 100A/μs
= 85V, V
= 1Ω (External)
= 10V, V
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
ADVANCE TECHNICAL INFORMATION
GS
= 0V, Note 1
GS
D
DS
DS
DS
= 0.5 • I
= 0V
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
30
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
6800
Typ.
0.21
1.27
695
113
48
76
22
46
30
43
10
14
8
0.13 °C/W
Max.
Max.
208
6,404,065 B1
6,534,343
6,583,505
250
1.3
52
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 Outline
TO-247 Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
3 - Source
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
IXFH52N50P2
IXFT52N50P2
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
2 - Drain
4 - Drain
0.205 0.225
0.232 0.252
∅ P
2 - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216