IXTH60N20L2 IXYS, IXTH60N20L2 Datasheet - Page 4

• Manufacturer Part Number: IXTH60N20L2
• Description: MOSFET N-CH 200V 60A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH60N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): 330
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
140
120
100
240
200
160
120
1.0
0.1
80
60
40
20
80
40
0
0
3.0
0.3
0
f
= 1 MHz
0.4
3.5
5
0.5
4.0
Fig. 9. Forward Voltage Drop of
10
0.6
Fig. 7. Input Admittance
4.5
T
Fig. 11. Capacitance
J
15
= 125ºC
Intrinsic Diode
0.7
V
V
V
SD
GS
DS
5.0
T
J
- Volts
- Volts
- Volts
= 125ºC
0.8
20
- 40ºC
25ºC
5.5
0.9
25
T
J
C iss
C oss
C rss
6.0
= 25ºC
1.0
30
6.5
1.1
35
7.0
1.2
1.3
7.5
40
1.000
0.100
0.010
0.001
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 30A
= 10mA
= 100V
50
20
0.0001
IXTT60N20L2 IXTQ60N20L2
100
40
Fig. 8. Transconductance
0.001
Q
Fig. 10. Gate Charge
G
Pulse Width - Seconds
150
I
- NanoCoulombs
D
- Amperes
60
0.01
200
80
250
IXTH60N20L2
0.1
100
T
J
300
= - 40ºC
125ºC
25ºC
1
120
350
140
400
10