IXTH60N20L2 IXYS, IXTH60N20L2 Datasheet - Page 3

• Manufacturer Part Number: IXTH60N20L2
• Description: MOSFET N-CH 200V 60A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH60N20L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 255nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 255
• Trr, Typ, (ns): 330
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0.0
0
0
V
GS
20
Fig. 5. R
= 10V
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
1
40
DS(on)
60
1.0
2
Normalized to I
V
Drain Current
GS
V
I
DS
D
80
V
= 20V
DS
- Amperes
V
14V
12V
10V
- Volts
GS
1.5
- Volts
3
= 20V
12V
10V
100
8V
D
T
J
120
= 30A Value vs.
2.0
= 125ºC
4
6V
4V
T
8V
6V
4V
J
J
J
= 125ºC
= 25ºC
= 25ºC
140
2.5
5
160
180
3.0
6
180
160
140
120
100
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
70
60
50
40
30
20
10
80
60
40
20
0
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
3
Fig. 4. R
-25
-25
= 10V
V
IXTT60N20L2 IXTQ60N20L2
GS
6
Fig. 6. Maximum Drain Current vs.
= 20V
14V
12V
10V
0
0
DS(on)
9
Junction Temperature
T
Normalized to I
Case Temperature
8V
6V
4V
C
T
25
25
J
- Degrees Centigrade
12
V
- Degrees Centigrade
DS
- Volts
50
15
50
18
I
D
75
75
D
IXTH60N20L2
= 30A Value vs.
= 60A
21
100
100
I
24
D
J
= 30A
= 25ºC
125
125
27
150
150
30