STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 5
![MOSFET N-CH 1500V 4A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP4N150
Manufacturer Part Number
STP4N150
Description
MOSFET N-CH 1500V 4A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Specifications of STP4N150
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.5 S
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
160000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
7ohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5091-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP4N150
Manufacturer:
FSC
Quantity:
3 000
Part Number:
STP4N150
Manufacturer:
ST
Quantity:
20 000
STFW4N150, STP4N150, STW4N150
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 11262 Rev 9
I
I
di/dt = 100 A/µs
V
Figure 21
I
di/dt = 100 A/µs
V
Figure 21
SD
SD
SD
DD
DD
= 4 A, V
= 4 A,
= 4 A,
Test conditions
= 45 V
= 45 V, T
GS
j
= 150°C
= 0
Electrical characteristics
Min.
-
-
-
-
Typ.
12.6
510
615
12
3
4
Max.
12
4
2
Unit
µC
µC
ns
ns
A
A
V
A
A
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