STP4N150 STMicroelectronics, STP4N150 Datasheet - Page 4

• Manufacturer Part Number: STP4N150
• Description: MOSFET N-CH 1500V 4A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP4N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.5 S
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 7ohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5091-5

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
CASE
V
R
(BR)DSS
T
g
t
C
I
I
C
C
GS(th)
d(off)
Q
Q
DS(on
DSS
GSS
fs
d(on)
Q
T
oss
t
rss
iss
gs
gd
f
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
D
V
V
V
V
R
(see Figure 18)
V
V
(see Figure 19)
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
DD
G
= 1 mA, V
= Max Rating
= Max Rating, T
= 4.7 Ω, V
= V
= ± 30 V
= 10 V, I
= 30 V , I
= 25 V, f = 1 MHz,
= 0
= 750 V, I
= 600 V, I
= 10 V
Test conditions
Test conditions
GS
, I
GS
D
D
= 250 µA
D
= 2 A
GS
D
D
= 0
= 2 A
= 2 A,
= 4 A,
= 10 V
C
= 125°C
STP4N150 - STW4N150
1500
Min.
Min. Typ. Max.
3
1300
Typ. Max. Unit
120
3.5
12
35
30
45
45
30
10
9
4
5
± 100
500
50
10
5
7
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S