STP20NM50FP STMicroelectronics, STP20NM50FP Datasheet - Page 5

• Manufacturer Part Number: STP20NM50FP
• Description: MOSFET N-CH 550V 20A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM50FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 45000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5394-5; STP20NM50FP

STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
Symbol
Symbol
I
V
t
SDM
t
t
r(Voff)
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
t
SD
t
t
t
t
c
r
f
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
V
R
(see Figure 16)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
=4.7Ω, V
=4.7Ω, V
=20A, V
=20A,di/dt=100A/µs,
=20A,di/dt=100A/µs,
Test conditions
Test conditions
=250 V, I
=400 V, I
=100 V, Tj= 25°C
=100 V, Tj=150°C
GS
GS
GS
D
D
=0
=10A,
=20A,
=10V
=10V
Min.
Min.
Electrical characteristics
Typ.
Typ.
350
435
8.5
4.6
5.9
24
16
40
12
23
26
27
9
Max.
Max
1.5
20
80
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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