IXFH320N10T2 IXYS, IXFH320N10T2 Datasheet - Page 6

• Manufacturer Part Number: IXFH320N10T2
• Description: MOSFET N-CH 100V 320A TO-247
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFH320N10T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0035
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 430
• Trr, Typ, (ns): 98
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.000
0.300
0.100
0.010
0.001
0.00001
0.0001
Fig. 19. Maximum Transient Thermal Impedance
0.001
Fig. 19. Maximum Transient Thermal Impedance
Pulse Width - Seconds
dfafas
0.01
0.1
IXFH320N10T2
IXFT320N10T2
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IXYS REF: F_320N10T2(98)02-01-10
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