IXFH320N10T2 IXYS, IXFH320N10T2 Datasheet - Page 4

• Manufacturer Part Number: IXFH320N10T2
• Description: MOSFET N-CH 100V 320A TO-247
• Manufacturer: IXYS
• Series: Trench™ HiPerFET™r

Specifications of IXFH320N10T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 320A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 430nC @ 10V
• Input Capacitance (ciss) @ Vds: 26000pF @ 25V
• Power - Max: 1000W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 320
• Rds(on), Max, Tj=25°c, (?): 0.0035
• Ciss, Typ, (pf): 25000
• Qg, Typ, (nc): 430
• Trr, Typ, (ns): 98
• Pd, (w): 1000
• Rthjc, Max, (k/w): 0.15
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
220
200
180
160
140
120
100
350
300
250
200
150
100
80
60
40
20
50
0
0
2.5
0.2
0
f
0.3
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.4
3.0
0.5
10
T
J
0.6
Fig. 7. Input Admittance
= 150ºC
3.5
Fig. 11. Capacitance
15
0.7
V
V
V
0.8
SD
DS
GS
4.0
- Volts
20
T
- Volts
- Volts
J
0.9
= 150ºC
- 40ºC
25ºC
1.0
25
C iss
C oss
C rss
4.5
T
1.1
J
= 25ºC
30
1.2
5.0
1.3
35
1.4
5.5
1.5
40
1,000
100
240
200
160
120
10
80
40
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
T
T
Single Pulse
V
I
I
R
J
C
D
G
DS
20
DS(on)
= 175ºC
= 25ºC
= 160A
= 10mA
50
Fig. 12. Forward-Bias Safe Operating Area
External Lead Limit
= 50V
40
Limit
100
60
Fig. 8. Transconductance
150
Fig. 10. Gate Charge
80
Q
G
V
100
DS
- NanoCoulombs
T
200
I
D
J
10
- Volts
= - 40ºC
- Amperes
120
250
IXFH320N10T2
IXFT320N10T2
140
25ºC
150ºC
300
160
180
350
200
DC
400
220
100
100µs
1ms
10ms
100ms
25µs
450
240