STF11NM80 STMicroelectronics, STF11NM80 Datasheet - Page 4

• Manufacturer Part Number: STF11NM80
• Description: MOSFET N-CH 800V 11A TO220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF11NM80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 43.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1630pF @ 25V
• Power - Max: 35W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 35000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4338-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
dv/dt
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
R
oss
t
t
rss
iss
gs
gd
r
f
g
g
(1)
(1)
= 25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Drain source voltage slope
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 9241 Rev 10
V
I
V
V
V
V
Figure 10
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
R
Figure 17
I
V
V
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
DD
G
DD
GS
DS
DS
GS
DS
GS
= 7.5 A
= 250 µA, V
=4.7 Ω, V
=0
=640 V, I
=400 V, I
= V
= 10 V, I
> I
=25 V, f=1 MHz,
=10 V
= Max rating,
= Max rating @125°C
= ±30 V
= 640 V, I
= 10 V
Test conditions
Test conditions
D(on)
GS
, I
D
x R
GS
D
D
D
= 5.5 A
= 250 µA
= 5.5 A,
D
GS
= 11 A
=10 V
DS(on)max
= 11 A,
= 0
,
Min.
800
Min.
3
-
-
-
-
-
1630
Typ.
0.35
Typ.
STB/F/P/W11NM80
43.6
11.6
750
2.7
30
30
21
22
17
46
15
4
8
Max.
Max.
0.40
100
100
10
5
-
-
-
-
-
V/ns
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
S
V
V