IXFK360N10T IXYS, IXFK360N10T Datasheet - Page 4

• Manufacturer Part Number: IXFK360N10T
• Description: MOSFET N-CH 100V 360A TO-264
• Manufacturer: IXYS
• Series: GigaMOS™ HiPerFET™r

Specifications of IXFK360N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 5V @ 3mA
• Gate Charge (qg) @ Vgs: 525nC @ 10V
• Input Capacitance (ciss) @ Vds: 33000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0029
• Ciss, Typ, (pf): 33000
• Qg, Typ, (nc): 525
• Trr, Typ, (ns): -
• Trr, Max, (ns): 130
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
320
280
240
200
160
120
1.0
0.1
80
60
40
20
80
40
0
0
3.0
0.2
0
f
= 1 MHz
0.3
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
3.5
0.4
10
Fig. 7. Input Admittance
4.0
0.5
Fig. 11. Capacitance
T
15
J
T
= 150ºC
J
= 150ºC
V
V
0.6
V
SD
GS
DS
4.5
- Volts
20
- Volts
- Volts
0.7
25ºC
25
5.0
0.8
C iss
C oss
C rss
T
J
= 25ºC
- 40ºC
30
0.9
5.5
35
1.0
6.0
1.1
40
1,000
350
300
250
200
150
100
100
50
10
10
9
8
7
6
5
4
3
2
1
0
1
0
0
1
0
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
DS
50
External Lead Limit
= 175ºC
20
= 180A
= 10mA
= 25ºC
Fig. 12. Forward-Bias Safe Operating Area
= 50V
Limit
100
40
150
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
200
Q
80
G
V
I
DS
- NanoCoulombs
D
250
- Amperes
10
- Volts
100
300
120
IXFK360N10T
IXFX360N10T
350
140
400
T
J
160
= - 40ºC
450
150ºC
25ºC
DC
180
500
100
100ms
25µs
100µs
1ms
10ms
200
550