IXFK360N10T IXYS, IXFK360N10T Datasheet - Page 2

• Manufacturer Part Number: IXFK360N10T
• Description: MOSFET N-CH 100V 360A TO-264
• Manufacturer: IXYS
• Series: GigaMOS™ HiPerFET™r

Specifications of IXFK360N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 360A
• Vgs(th) (max) @ Id: 5V @ 3mA
• Gate Charge (qg) @ Vgs: 525nC @ 10V
• Input Capacitance (ciss) @ Vds: 33000pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 360
• Rds(on), Max, Tj=25°c, (?): 0.0029
• Ciss, Typ, (pf): 33000
• Qg, Typ, (nc): 525
• Trr, Typ, (ns): -
• Trr, Max, (ns): 130
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
2. Includes lead resistance.
V
V
Gate Input Resistance
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 100A, V
= 100A, V
= 50V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 100A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Min.
110
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
3160
0.05
1.20
180
400
100
160
525
145
165
Typ.
Typ.
6.60
0.33
33
47
80
0.12 °C/W
1440
6,404,065 B1
6,534,343
6,583,505
Max.
360
130
Max.
1.2
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 Outline
PLUS 247
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
Terminals: 1 - Gate
20.80
15.75
19.81
25.91
19.81
20.32
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
Millimeter
5.45 BSC
Millimeter
5.46 BSC
Outline
IXFK360N10T
IXFX360N10T
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
1.020
Min.
Terminals:
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
1 - Gate
2 - Drain
3 - Source
4 - Drain