IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 5
![MOSFET N-CH 100V 130A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4310PBF
Manufacturer Part Number
IRFB4310PBF
Description
MOSFET N-CH 100V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
5.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
68 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
160 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
140 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4310PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 15. Maximum Avalanche Energy vs. Temperature
1000
800
600
400
200
0
25
0.0001
0.001
100
0.1
0.01
10
Starting T J , Junction Temperature (°C)
0.1
1
1.0E-06
1
1E-006
50
Duty Cycle = Single Pulse
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
D = 0.50
TOP
BOTTOM 1% Duty Cycle
I D = 75A
75
0.20
0.10
0.05
0.02
0.01
100
SINGLE PULSE
( THERMAL RESPONSE )
Single Pulse
1.0E-05
1E-005
Fig 14. Typical Avalanche Current vs.Pulsewidth
125
150
175
0.01
0.05
0.10
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long as neither T
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
tav (sec)
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
is exceeded.
av
av =
thJC
D (ave)
= Allowable avalanche current.
=
τ
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
J
τ
J
τ
1
Ci= τi/Ri
= Average power dissipation per single avalanche pulse.
τ
av
1
Ci= i/Ri
) = Transient thermal resistance, see Figures 13)
1.0E-03
jmax
R
0.001
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆ Tj = 150°C
and Tstart =25°C (Single Pulse)
1
R
. This is validated for every part type.
1
P
τ
2
D (ave)
τ
R
2
2
R
2
τ
= 1/2 ( 1.3·BV·I
I
E
C
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
AS (AR)
= 2DT/ [1.3·BV·Z
av
1.0E-02
Ri (°C/W)
·f
0.1962
0.2542
= P
0.01
D (ave)
av
) = DT/ Z
·t
th
av
0.00117
0.016569
]
τi (sec)
thJC
jmax
1.0E-01
(assumed as
0.1
jmax
nor I
av (max)
5