IXTH6N150 IXYS, IXTH6N150 Datasheet - Page 5

• Manufacturer Part Number: IXTH6N150
• Description: MOSFET N-CH 1500V 6A TO-247
• Manufacturer: IXYS

Specifications of IXTH6N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 3.5
• Ciss, Typ, (pf): 2230
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 1500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTH6N150
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
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IXYS REF: T_6N150 (5P)1-19-10