IXTH6N150 IXYS, IXTH6N150 Datasheet - Page 3

• Manufacturer Part Number: IXTH6N150
• Description: MOSFET N-CH 1500V 6A TO-247
• Manufacturer: IXYS

Specifications of IXTH6N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 2230pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 3.5
• Ciss, Typ, (pf): 2230
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 1500
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
V
GS
1
2
Fig. 5. R
= 10V
5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
2
4
10
DS(on)
3
6
Normalized to I
15
Drain Current
4
I
D
V
V
8
DS
- Amperes
DS
20
- Volts
- Volts
5
10
6
T
25
V
J
D
GS
= 125ºC
V
12
GS
= 3A Value vs.
= 10V
= 10V
7V
6V
5V
7
T
J
7V
6V
5V
J
J
30
= 125ºC
= 25ºC
= 25ºC
14
8
35
16
9
18
40
10
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
10
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
-50
-50
0
V
Fig. 2. Extended Output Characteristics @ T
GS
= 10V
-25
Fig. 4. R
-25
5
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
T
T
Case Temperature
Normalized to I
C
J
25
25
- Degrees Centigrade
- Degrees Centigrade
15
V
DS
50
50
- Volts
20
IXTH6N150
V
75
75
D
GS
= 3A Value vs.
I
= 10V
D
7V
6V
5V
= 6A
25
100
100
I
J
D
30
= 3A
= 25ºC
125
125
150
150
35