IRFB42N20DPBF International Rectifier, IRFB42N20DPBF Datasheet - Page 8

• Manufacturer Part Number: IRFB42N20DPBF
• Description: MOSFET N-CH 200V 44A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB42N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3430pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 44 A
• Gate Charge, Total: 91 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 0.055 Ohm
• Resistance, Thermal, Junction To Case: 0.45 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 29 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB42N20DPBF

IRFB42N20DPbF
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Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
8
Repetitive rating; pulse width limited by
R
max. junction temperature.
Starting T
G
= 25Ω, I
J
= 25°C, L = 1.45mH
AS
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
= 26A, V
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
E XAMP L E :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
GS
T H IS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
=10V
10.54 (.415)
10.29 (.405)
1
2
3
4
3X
This product has been designed and qualified for the Industrial market.
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
M
- A -
ƒ
„
…
B A M
Pulse width ≤ 400µs; duty cycle ≤ 2%.
I
C
T
as C
SD
Visit us at www.irf.com for sales contact information.7/04
J
oss
Data and specifications subject to change without notice.
INT E RNAT IONAL
≤ 175°C
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
≤ 26A, di/dt ≤ 110A/µs, V
Qualification Standards can be found on IR’s Web site.
R E CT IF IE R
AS S E MB L Y
L OT CODE
eff. is a fixed capacitance that gives the same charging time
oss
L OGO
while V
4.69 (.185)
4.20 (.165)
DS
is rising from 0 to 80% V
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
DD
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
≤ V
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PART NU MB E R
(BR)DSS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TAC Fax: [phone]
,
DSS
www.irf.com