IRFB42N20DPBF International Rectifier, IRFB42N20DPBF Datasheet - Page 6

• Manufacturer Part Number: IRFB42N20DPBF
• Description: MOSFET N-CH 200V 44A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB42N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Input Capacitance (ciss) @ Vds: 3430pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Current, Drain: 44 A
• Gate Charge, Total: 91 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 330 W
• Resistance, Drain To Source On: 0.055 Ohm
• Resistance, Thermal, Junction To Case: 0.45 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 29 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 21 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB42N20DPBF

IRFB42N20DPbF
Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
R G
20V
V
V
V DS
GS
G
t p
Q
GS
t p
I AS
D.U.T
0.01 Ω
L
Charge
Q
Q
V
GD
G
(BR)DSS
15V
DRIVER
+
-
V DD
A
1000
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
Vs. Drain Current
Same Type as D.U.T.
J
Current Regulator
.2µF
75
50KΩ
3mA
Current Sampling Resistors
100
.3µF
I
G
125
TOP
BOTTOM
www.irf.com
D.U.T.
I
D
150
+
-
V
DS
°
I D
11A
19A
26A
175