IXTH2R4N120P IXYS, IXTH2R4N120P Datasheet - Page 2

• Manufacturer Part Number: IXTH2R4N120P
• Description: MOSFET N-CH 1200V 2.4A TO-247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTH2R4N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1207pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.5 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 2.4
• Rds(on), Max, Tj=25°c, (?): 7.50
• Ciss, Typ, (pf): 1207
• Qg, Typ, (nc): 37.0
• Trr, Typ, (ns): 920
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
TO-263 (IXTA) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
(TO-220)
(TO-247)
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 2.4A, -di/dt = 100A/μs,
= 100V, V
= 20V, I
= 18Ω (External)
= 10V, V
= 0V, V
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
DS
GS
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
(T
JM
J
D25
D25
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
1.2
Characteristic Values
Characteristic Values
6,162,665
6,259,123B1
6,306,728B1
1207
11.2
Typ.
Typ.
0.50
920
2.0
0.21
57
22
25
70
32
37
20
6
1.0 °C/W
6,404,065B1
6,534,343
6,583,505
Max
1.5 V
Max.
7.2 A
2.4 A
°C/W
°C/W
IXTA2R4N120P IXTP2R4N120P
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
6,683,344
6,710,405B2
6,710,463
TO-220 (IXTP) Outline
TO-247 (IXTH) Outline
Dim.
Pins: 1 - Gate
6,727,585
6,759,692
6,771,478B2 7,071,537
Terminals: 1 - Gate 2 - Drain
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
4.7
2.2
2.2
1.0
Millimeter
.4
1
IXTH2R4N120P
3 - Source
7,005,734B2
7,063,975B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
2 - Drain
0.205
0.232
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242 BSC
Inches
7,157,338B2
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216