IXTH2R4N120P IXYS, IXTH2R4N120P Datasheet
IXTH2R4N120P
Specifications of IXTH2R4N120P
Related parts for IXTH2R4N120P
IXTH2R4N120P Summary of contents
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... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P Maximum Ratings 1200 = 1MΩ 1200 GS ±20 ±30 2 2.4 200 ≤ 150°C 10 125 -55 ... +150 150 -55 ... +150 300 260 1. 2.5 3.0 6.0 Characteristic Values Min ...
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... DSS D D25 0.50 0.21 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 920 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123B1 5,034,796 5,187,117 5,486,715 6,306,728B1 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P TO-220 (IXTP) Outline Max Pins Gate 20 nC 1.0 °C/W °C/W °C/W Max. ...
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... Value D 2.8 2 125ºC J 2.0 1.6 1.2 0.8 0 25ºC J 0.0 2.0 2.5 3.0 3.5 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 2.4A D -50 - Degrees Centigrade J Fig ...
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... T = 25º 0.7 0.75 0.8 0.85 0.9 10.00 C iss 1.00 C oss 0.10 C rss 0. 0.00001 IXTA2R4N120P IXTP2R4N120P IXTH2R4N120P Fig. 8. Transconductance T 0.4 0.8 1.2 1.6 2 Amperes D Fig. 10. Gate Charge V = 600V 1. 10mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 ...