STW21NM50N STMicroelectronics, STW21NM50N Datasheet

MOSFET N-CH 500V 18A TO-247

STW21NM50N

Manufacturer Part Number
STW21NM50N
Description
MOSFET N-CH 500V 18A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STW21NM50N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4806-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW21NM50N
Manufacturer:
ST
Quantity:
12 000
Part Number:
STW21NM50N
Manufacturer:
ST
Quantity:
6 000
Company:
Part Number:
STW21NM50N
Quantity:
2 800
Part Number:
STW21NM50ND
Manufacturer:
ST
0
Part Number:
STW21NM50N��W21NM50N,STW25NM60N
Manufacturer:
ST
0
Features
1. Limited only by maximum temperature allowed
Application
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary MOSFET associates a new vertical
structure to the Company’s strip layout to yield
one of the world’s lowest on-resistance and gate
charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
November 2008
STB25NM50N-1
STW25NM50N
STB25NM50N
STF25NM50N
STP25NM50N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STB25NM50N-1
STW25NM50N
Type
STB25NM50N
STF25NM50N
STP25NM50N
Order codes
N-channel 500 V, 0.11 Ω, 22 A MDmesh™ II Power MOSFET
Device summary
(@Tjmax)
550 V
550 V
550 V
550 V
550 V
V
DSS
< 0.140 Ω
< 0.140 Ω
< 0.140 Ω
< 0.140 Ω
< 0.140 Ω
R
max
DS(on)
W25NM50N
B25NM50N
B25NM50N
P25NM50N
F25NM50N
Marking
TO-220, TO-220FP, I
22 A
22 A
22 A
22 A
22 A
I
D
(1)
Rev 13
Figure 1.
TO-220FP
TO-220FP
I²PAK
Package
TO-220
TO-247
D
I
2
2
PAK
PAK
1 2
Internal schematic diagram
1
3
2
2
3
PAK, D
D²PAK
STx25NM50N
1
2
3
PAK, TO-247
Tape and reel
Packaging
Tube
Tube
Tube
Tube
TO-247
TO-220
www.st.com
1
1
2
2
3
1/18
3
18

Related parts for STW21NM50N

STW21NM50N Summary of contents

Page 1

N-channel 500 V, 0.11 Ω MDmesh™ II Power MOSFET Features V DSS Type (@Tjmax) STB25NM50N 550 V STB25NM50N-1 550 V STF25NM50N 550 V STP25NM50N 550 V STW25NM50N 550 V 1. Limited only by maximum temperature allowed ■ 100% ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STx25NM50N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage (1) dv/dt Drain source voltage slope Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current ...

Page 5

STx25NM50N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 4. Safe operating area for TO-220FP Figure 6. Safe operating area for TO-247 6/18 Figure 3. Thermal impedance for TO-220 / D²PAK ...

Page 7

STx25NM50N Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Electrical characteristics Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance 7/18 ...

Page 8

Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics 8/18 Figure 15. Normalized on resistance vs temperature Figure 17. Normalized B VDSS STx25NM50N vs temperature ...

Page 9

STx25NM50N 3 Test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive waveform Figure 19. Gate charge test circuit Figure 21. Unclamped Inductive ...

Page 10

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and ...

Page 11

STx25NM50N Dim L20 L30 ∅P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 ...

Page 12

Package mechanical data Dim 12/18 D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 ...

Page 13

STx25NM50N Dim I²PAK (TO-262) mechanical data mm Min Typ Max 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 9.35 2.40 2.70 4.95 ...

Page 14

Package mechanical data DIM Ø 14/18 TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 0.75 1 1.15 ...

Page 15

STx25NM50N Dim øP øR S TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Package mechanical ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STx25NM50N 6 Revision history Table 9. Document revision history Date 30-Nov-2004 08-Mar-2005 22-Mar-2005 13-Apr-2005 28-Apr-2005 16-May-2005 17-Jun-2005 07-Sep-2005 05-Oct-2005 09-Nov-2005 14-Nov-2006 19-Jan-2007 17-Nov-2008 Revision 1 First release. 2 Inserted curves 3 Modified title 4 Modified some values 5 Modified some ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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