STP150NF55 STMicroelectronics, STP150NF55 Datasheet

MOSFET N-CH 55V 120A TO-220

STP150NF55

Manufacturer Part Number
STP150NF55
Description
MOSFET N-CH 55V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STP150NF55

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
4400pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6117-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP150NF55
Manufacturer:
PANASONIC
Quantity:
5 000
Part Number:
STP150NF55
Manufacturer:
ST
0
Part Number:
STP150NF55
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP150NF55,P150NF55
Manufacturer:
ST
0
Part Number:
STP150NF55.
Manufacturer:
ST
0
Part Number:
STP150NF55��STP270N4F3,STP1501F
Manufacturer:
ST
0
Part Number:
STP150NF55������
Manufacturer:
ST
0
Order codes
General features
1. Current limited by package
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
June 2006
STW150NF55
STB150NF55
STP150NF55
100% avalanche tested
Switching application
Type
STB150NF55T4
STW150NF55
STP150NF55
Sales type
N-channel 55V - 0.005Ω - 120A - D
V
55V
55V
55V
DSS
<0.006Ω
<0.006Ω
<0.006Ω
R
DS(on)
W150NF55
B150NF55
P150NF55
Marking
120A
120A
120A
I
D
STP150NF55 - STW150NF55
(1)
(1)
(1)
Rev 3
Internal schematic diagram
STripFET™ II Power MOSFET
TO-220
Package
TO-220
TO-247
D
2
PAK
1
2
2
3
PAK/TO-220/TO-247
STB150NF55
TO-247
Tape & reel
Packaging
Tube
Tube
D
2
PAK
1
www.st.com
3
1/19
19

Related parts for STP150NF55

STP150NF55 Summary of contents

Page 1

... Applications ■ Switching application Order codes Sales type STB150NF55T4 STP150NF55 STW150NF55 June 2006 STP150NF55 - STW150NF55 STripFET™ II Power MOSFET I DS(on) D (1) 120A (1) 120A (1) 120A Internal schematic diagram Marking ...

Page 2

... Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Test circuit 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Packaging mechanical data 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STB150NF55 - STP150NF55 - STW150NF55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

... STB150NF55 - STP150NF55 - STW150NF55 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed Total dissipation at T tot Derating Factor (3) dv/dt Peak diode recovery voltage slope ...

Page 4

... Turn-off delay time d(off) t Fall time f Q Total gate charge g Q Gate-source charge gs Q Gate-drain charge gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/19 STB150NF55 - STP150NF55 - STW150NF55 Parameter Test conditions I = 250µ max ratings max ratings 125° ± ...

Page 5

... STB150NF55 - STP150NF55 - STW150NF55 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/19 STB150NF55 - STP150NF55 - STW150NF55 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

... STB150NF55 - STP150NF55 - STW150NF55 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized B VDSS vs temperature 7/19 ...

Page 8

... Electrical characteristics Figure 13. Power derating vs Tc Figure 15. Thermal resistance R copper area 8/19 STB150NF55 - STP150NF55 - STW150NF55 Figure 14. Max I vs PCB Figure 16. Max power dissipation vs PCB thj-a copper area current ...

Page 9

... STB150NF55 - STP150NF55 - STW150NF55 Figure 17. Allowable lav vs time in avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions 0 D(AVE AS(AR) D(AVE) Where the allowable current in avalanche the average power dissipation in avalanche (single pulse) ...

Page 10

... Spice thermal model 3 Spice thermal model Table 6. Parameters Parameter CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 Figure 18. Scheme 10/19 STB150NF55 - STP150NF55 - STW150NF55 Node Value 0.011 0.0012 0.17 ...

Page 11

... STB150NF55 - STP150NF55 - STW150NF55 4 Test circuit Figure 19. Switching times test circuit for resistive load Figure 21. Test circuit for inductive load switching and diode recovery times Figure 23. Unclamped inductive waveform Figure 20. Gate charge test circuit Figure 22. Unclamped Inductive load test circuit Figure 24. Switching time waveform ...

Page 12

... Test circuit Figure 25. Diode recovery times waveform 12/19 STB150NF55 - STP150NF55 - STW150NF55 ...

Page 13

... STB150NF55 - STP150NF55 - STW150NF55 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 14

... Package mechanical data DIM 14/19 STB150NF55 - STP150NF55 - STW150NF55 2 D PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 0.23 0.7 0.93 1.14 1.7 0.45 0.6 1.23 1.36 8.95 9. 10.4 8.5 4.88 5.28 15 15.85 1.27 1.4 1.4 1 ...

Page 15

... STB150NF55 - STP150NF55 - STW150NF55 DIM øP øR S TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.85 5.15 2.20 2.60 1.0 1.40 2.0 2.40 3.0 3.40 0.40 0.80 19.85 20.15 15.45 15.75 5.45 14.20 14.80 3.70 4.30 18.50 3.55 3.65 4.50 5.50 5.50 Package mechanical data inch MIN ...

Page 16

... Package mechanical data DIM L20 L30 øP Q 16/19 STB150NF55 - STP150NF55 - STW150NF55 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3 ...

Page 17

... STB150NF55 - STP150NF55 - STW150NF55 6 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 P1 11.9 12.1 P2 1.9 2 0.25 0.35 0.0098 0.0137 W 23.7 24 sales type ...

Page 18

... Revision history 7 Revision history Table 7. Revision history Date 21-Jun-2004 26-Jun-2006 18/19 STB150NF55 - STP150NF55 - STW150NF55 Revision 2 Preliminary version 3 New template, no content change Changes ...

Page 19

... STB150NF55 - STP150NF55 - STW150NF55 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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