IXTH160N15T IXYS, IXTH160N15T Datasheet - Page 3

• Manufacturer Part Number: IXTH160N15T
• Description: MOSFET N-CH 150V 160A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH160N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 160
• Rds(on), Max, Tj=25°c, (?): 0.0096
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 115
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
160
140
120
100
160
140
120
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0
0
0
Fig. 5. R
V
GS
0.4
0.2
40
= 10V
15V - - - -
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.8
0.4
DS(on)
80
1.2
vs. Drain Current
120
0.6
Normalized to I
I
D
V
V
@ 150ºC
@ 25ºC
1.6
DS
DS
- Amperes
V
V
GS
160
0.8
- Volts
- Volts
GS
= 10V
= 10V
2
9V
8V
7V
9V
8V
200
1
2.4
D
= 80A Value
240
1.2
2.8
6V
5V
T
T
J
7V
6V
5V
J
= 175ºC
= 25ºC
280
1.4
3.2
320
1.6
3.6
350
300
250
200
150
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
80
70
60
50
40
30
20
10
50
0
0
-50
-50
0
Fig. 6. Drain Current vs. Case Temperature
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
V
-25
1
External Lead Current Limit
GS
= 10V
= 10V
2
9V
8V
0
0
DS(on)
vs. Junction Temperature
T
7V
6V
5V
C
T
3
- Degrees Centigrade
J
25
25
- Degrees Centigrade
Normalized to I
V
4
DS
50
@ 25ºC
50
- Volts
I
D
5
= 160A
75
75
IXTH160N15T
6
100
100
D
7
= 80A Value
I
D
= 80A
125
125
8
150
150
9
175
175
10