IXTH160N15T IXYS, IXTH160N15T Datasheet

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IXTH160N15T

Manufacturer Part Number
IXTH160N15T
Description
MOSFET N-CH 150V 160A TO-247
Manufacturer
IXYS
Series
TrenchHV™r
Datasheet

Specifications of IXTH160N15T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.6 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
8800pF @ 25V
Power - Max
830W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
150
Id(cont), Tc=25°c, (a)
160
Rds(on), Max, Tj=25°c, (?)
0.0096
Ciss, Typ, (pf)
8800
Qg, Typ, (nc)
160
Trr, Typ, (ns)
115
Trr, Max, (ns)
-
Pd, (w)
830
Rthjc, Max, (k/w)
0.18
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
LRMS
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSM
AS
d
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
V
V
V
V
V
Test Conditions
Test Conditions
S
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
TM
GS
, V
DSS
, I
DD
D
D
D
= 250 μA
= 1 mA
≤ V
= 0.5 • I
DS
DSS
= 0 V
, T
D25
J
GS
Preliminary Technical Information
≤ 175°C
, Note 1
= 1MΩ
T
J
= 150°C
JM
IXTH160N15T
Min.
150
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
8.0
± 30
150
150
160
430
830
175
300
260
1.0
75
10
± 200
5
6
300
Max.
5.0
9.6
25
V/ns
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
A
V
V
g
J
V
I
R
TO-247
G = Gate
S = Source
Features
Advantages
D25
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Easy to mount
Space savings
High power density
DS(on)
DSS
G
= 150
= 160
≤ ≤ ≤ ≤ ≤
D
S
D = Drain
TAB = Drain
9.6 mΩ Ω Ω Ω Ω
DS99840 (06/07)
(TAB)
A
V

Related parts for IXTH160N15T

IXTH160N15T Summary of contents

Page 1

... V = ± GSS DSS DS DSS 0.5 • DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH160N15T Maximum Ratings 150 = 1MΩ 150 GS ± 30 160 75 430 JM 1.0 ≤ 175° 830 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. Characteristic Values Min. Typ. ...

Page 2

... I 21 DSS D D25 60 31 160 , I = 25A 43 DSS D 46 0.21 Characteristic Values Min. Typ. JM 115 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH160N15T TO-247AD Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min. Max. A 4.7 5 2.2 2. 2.2 2.6 2 0.18 ° ...

Page 3

... Value 175º 25º 200 240 280 320 IXTH160N15T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) D vs. Junction Temperature V = 10V 160A D -50 - 100 ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions. 180 160 140 120 100 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss 0.10 C oss 0.01 C rss 0. IXTH160N15T Fig. 8. Transconductance 40ºC J 25ºC 150º 100 120 I - Amperes D Fig. 10. Gate Charge V = 75V 25A 10mA ...

Page 5

... IXTH160N15T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 15V 75V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature d(off Ω 75V 80A Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs ...

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