STW22NM60N STMicroelectronics, STW22NM60N Datasheet - Page 4

• Manufacturer Part Number: STW22NM60N
• Description: MOSFET N-CH 600V 16A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW22NM60N

• Package / Case: TO-247
• Mounting Type: Through Hole
• Power - Max: 125W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 100µA
• Current - Continuous Drain (id) @ 25° C: 16A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
2
4/17
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Table 6.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
R
C
V
(BR)DSS
V
when V
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
GSS
DSS
Q
R
DS
oss
iss
rss
gs
gd
g
g
(1)
increases from 0 to 80% V
(2)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
DSS
STB22NM60N, STF22NM60N, STP22NM60N, STW22NM60N
= 0)
Doc ID 15853 Rev 2
DSS
V
V
V
f=1 MHz open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 480 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 100 µA
= 8 A
= 0
= 16 A,
GS
C
=125 °C
= 0
Min.
Min.
600
2
-
-
-
-
-
1330
Typ.
Typ.
121
4.6
4.7
0.2
84
62
44
25
3
6
Max.
Max.
0.22
100
oss
10
1
4
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
pF
Ω
Ω
V
V