STP12NM50FP STMicroelectronics, STP12NM50FP Datasheet - Page 9
![MOSFET N-CH 500V 12A TO220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STP12NM50FP
Manufacturer Part Number
STP12NM50FP
Description
MOSFET N-CH 500V 12A TO220FP
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP12NM50.pdf
(17 pages)
Specifications of STP12NM50FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 50µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1000pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
35000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2665-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP12NM50FP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP12NM50FP
Manufacturer:
ST
Quantity:
20 000
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
3
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 15. Gate charge test circuit
Figure 17. Unclamped Inductive load test
Figure 19. Switching time waveform
circuit
Test circuit
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