IXFH12N100P IXYS, IXFH12N100P Datasheet - Page 2

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IXFH12N100P

Manufacturer Part Number
IXFH12N100P
Description
MOSFET N-CH 1000V 12A TO-247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFH12N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
4080pF @ 25V
Power - Max
463W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.05 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
12 A
Power Dissipation
463 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
4080
Qg, Typ, (nc)
80
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
463
Rthjc, Max, (ºc/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH12N100P
Manufacturer:
SHARP
Quantity:
30 000
Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
PLUS220SMD (IXFV_S) Outline
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
Resistive Switching Times
V
R
I
V
Test Conditions
V
Gate input resistance
V
V
(TO-247, PLUS220)
V
Repetitive, pulse width limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 6A, -di/dt = 100A/μs
= I
= 100V, V
= 10V, V
= 2Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
DS
GS
DS
= 0.5 • I
= 0.5 • V
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
4.8
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
4080
Typ.
0.21
246
0.8
7.9
8.8
1.9
40
30
80
24
35
25
60
36
0.27 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
300 ns
1.5
12
48
°C/W
IXFH12N100P IXFV12N100P
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXFH) Outline
PLUS220 (IXFV) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
1
2
6,771,478 B2 7,071,537
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
IXFV12N100PS
21.46
16.26
20.32
BSC
7,005,734 B2
7,063,975 B2
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
e
.8
∅ P
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242
Inches
7,157,338B2
Max.
BSC
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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