IXFH12N100P IXYS, IXFH12N100P Datasheet
IXFH12N100P
Specifications of IXFH12N100P
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IXFH12N100P Summary of contents
Page 1
... GS(th ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on © 2008 IXYS CORPORATION, All rights reserved IXFH12N100P IXFV12N100P IXFV12N100PS Maximum Ratings 1000 = 1MΩ 1000 GS ± 30 ± 750 ≤ 150° 463 -55 ... +150 150 -55 ... +150 300 260 1.13/10 11..65/2.5..14 Characteristic Values Min ...
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... I = 0.5 • DSS D D25 35 0.21 Characteristic Values Min. Typ. JM 0.8 7.9 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFH12N100P IXFV12N100P IXFV12N100PS PLUS220 (IXFV) Outline Max. S Ω 0.27 °C/W °C/W Max TO-247 (IXFH) Outline 1.5 V 300 ns μ ...
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... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V Value 125º 25º IXFH12N100P IXFV12N100P IXFV12N100PS Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2.8 2.4 2 12A D 1.6 1.2 0.8 0.4 -50 - Degrees Centigrade J Fig ...
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... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC J 25ºC - 40ºC 5.0 5.5 6.0 6.5 = 125º 25ºC J 0.8 0.9 1.0 1.1 C iss C oss C rss IXFH12N100P IXFV12N100P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 500V 10mA G 12 ...