IXFA6N120P IXYS, IXFA6N120P Datasheet - Page 3

• Manufacturer Part Number: IXFA6N120P
• Description: MOSFET N-CH 1200V 6A D2PAK
• Manufacturer: IXYS
• Series: Polar™ HiPerFET™r

Specifications of IXFA6N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 2.4
• Ciss, Typ, (pf): 2830
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 250
• Rthjc, Max, (ºc/w): 0.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
6
5
4
3
2
1
0
6
5
4
3
2
1
0
0
0
0
V
1
GS
Fig. 5. R
4
2
= 10V
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
2
8
4
DS(on)
3
Normalized to I
4
12
6
Drain Current
V
DS
I
V
D
DS
5
- Amperes
- Volts
16
- Volts
8
T
J
6
= 125ºC
T
V
J
GS
= 25ºC
20
10
= 10V
D
7
= 3A Value vs.
7V
6V
5V
4V
V
GS
J
J
8
24
12
= 25ºC
= 125ºC
= 10V
4V
5V
6V
9
14
28
10
16
32
11
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
12
10
8
6
4
2
0
7
6
5
4
3
2
1
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
= 10V
-25
-25
Fig. 4. R
5
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
IXFA6N120P IXFP6N120P
Junction Temperature
10
T
Case Temperature
C
Normalized to I
T
25
25
J
- Degrees Centigrade
V
- Degrees Centigrade
DS
- Volts
15
50
50
75
75
D
I
D
20
= 3A Value vs.
IXFH6N120P
= 6A
100
100
V
I
D
GS
= 3A
J
25
= 10V
= 25ºC
125
125
7V
6V
5V
150
150
30