IXFA6N120P IXYS, IXFA6N120P Datasheet - Page 2

• Manufacturer Part Number: IXFA6N120P
• Description: MOSFET N-CH 1200V 6A D2PAK
• Manufacturer: IXYS
• Series: Polar™ HiPerFET™r

Specifications of IXFA6N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 2830pF @ 25V
• Power - Max: 250W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 2.4
• Ciss, Typ, (pf): 2830
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 250
• Rthjc, Max, (ºc/w): 0.5
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
Gi
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
TO-263 (IXFA) Outline
1: Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
Test Conditions
V
Gate Input Resistance
V
Resistive Switching Times
V
R
V
TO-220
TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/µs
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 3A, V
= 100V
= 20V, I
= 10V, V
= 0V, V
= 10V, V
= 3Ω (External)
= 0V
S
, V
ADVANCE TECHNICAL INFORMATION
GS
GS
= 0V, Note 1
1. Gate
2. Collector
3. Emitter
4. Collector
D
DS
= 0V
DS
Bottom Side
DS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
5,049,961
5,063,307
5,187,117
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
JM
Min.
D25
D25
Millimeter
0
10.41
15.88
Max.
BSC
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
2.79
1.40
1.78
0.13
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
Characteristic Values
3.0
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
Min.
Inches
0
6,162,665
6,259,123B1
6,306,728B1
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005
2830
Typ.
Typ.
0.50
0.21
150
7.8
1.1
5.0
1.8
30
24
11
60
14
92
15
50
0.50 °C/W
300
Max
Max
1.4
6,404,065B1
6,534,343
6,583,505
24
6
°C/W
°C/W
µC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405B2
6,710,463
IXFA6N120P IXFP6N120P
TO-247 (IXFH) AD Outline
TO-220 (IXFP) Outline
1 = Gate
2 = Collector
3 = Emitter
Pins: 1 - Gate
6,727,585
6,759,692
6,771,478B2 7,071,537
3 - Source
7,005,734B2
7,063,975B2
IXFH6N120P
2 - Drain
4 - Drain
7,157,338B2