IRFP2907ZPBF International Rectifier, IRFP2907ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP2907ZPBF
• Description: MOSFET N-CH 75V 90A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP2907ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Current, Drain: 170 A
• Gate Charge, Total: 180 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 310 W
• Resistance, Drain To Source On: 4.5 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 97 ns
• Time, Turn-on Delay: 19 ns
• Transconductance, Forward: 180 S
• Voltage, Breakdown, Drain To Source: 75 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP2907ZPBF


‚
ƒ
„
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
2
g
gs
gd
rr
Repetitive rating; pulse width limited by
L=0.13mH, R
Part not recommended for use above this value.
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
T
max. junction temperature. (See fig. 11).
Limited by T
SD
J
DSS
eff.
≤ 175°C.
≤ 90A, di/dt ≤ 340A/µs, V
/∆T
J
J
Jmax
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 25Ω, I
, starting T
Parameter
AS
= 90A, V
Parameter
J
DD
™
= 25°C,
≤ V
GS
(BR)DSS
=10V.
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
…
†
‡
ˆ
–––
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
C
charging time as C
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
R
avalanche performance.
oss
θ
is measured at
0.069
7500
3640
1020
–––
–––
–––
–––
–––
–––
–––
180
140
100
970
510
650
–––
–––
–––
eff. is a fixed capacitance that gives the same
3.5
5.0
46
65
19
97
13
41
59
-200
–––
–––
–––
–––
–––
–––
250
200
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
680
Jmax
4.5
4.0
1.3
20
90
61
89
, see Fig.12a, 12b, 15, 16 for typical repetitive
oss
V/°C
mΩ
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
J
while V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 90A
= 90A
= 25°C, I
= 25°C, I
DS
= 2.5Ω
= V
= 25V, I
= 75V, V
= 75V, V
= 60V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 38V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
is rising from 0 to 80% V
GS
, I
f
f
Conditions
D
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 90A, V
= 90A
= 90A, V
= 90A
= 0V to 60V
= 1.0V, ƒ = 1.0MHz
= 60V, ƒ = 1.0MHz
f
= 0V
= 0V, T
D
f
= 1mA
GS
DD
J
G
= 125°C
= 38V
= 0V
G
DSS
f
S
D
S
D
.