IRFP2907ZPBF International Rectifier, IRFP2907ZPBF Datasheet
IRFP2907ZPBF
Manufacturer Part Number
IRFP2907ZPBF
Description
MOSFET N-CH 75V 90A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFP2907ZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Current, Drain
170 A
Gate Charge, Total
180 nC
Package Type
TO-247AC
Polarization
N-Channel
Power Dissipation
310 W
Resistance, Drain To Source On
4.5 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
97 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
180 S
Voltage, Breakdown, Drain To Source
75 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
170 A
Mounting Style
Through Hole
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP2907ZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP2907ZPBF
Manufacturer:
VISHAY
Quantity:
10 000
Features
l
l
l
l
l
l
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
HEXFET
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
j
Parameter
Parameter
AUTOMOTIVE MOSFET
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
jÃ
(Package Limited)
i
G
d
IRFP2907ZPbF
300 (1.6mm from case )
HEXFET
See Fig.12a,12b,15,16
Typ.
0.24
–––
–––
10 lbf•in (1.1N•m)
D
S
-55 to + 175
Max.
170
120
680
310
± 20
520
690
2.0
90
®
R
Power MOSFET
DS(on)
Max.
0.49
V
–––
40
DSS
I
D
TO-247AC
= 90A
= 4.5mΩ
= 75V
PD - 95480
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
‰
1
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IRFP2907ZPBF Summary of contents
Page 1
... Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance j R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. AUTOMOTIVE MOSFET IRFP2907ZPbF G Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter jà 95480 ® ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current ...
Page 3
EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY INT ERNATIONAL LOT CODE 5657 RECT IFIER ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" ASSEMBLY LOT CODE Data and ...