STI15NM60ND STMicroelectronics, STI15NM60ND Datasheet - Page 11
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STI15NM60ND
Manufacturer Part Number
STI15NM60ND
Description
MOSFET N-CH 600V 14A I2PAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet
1.STP15NM60ND.pdf
(19 pages)
Specifications of STI15NM60ND
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
299 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.299 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
STP15NM60ND - STF/I15NM60ND - STB15NM60ND - STW15NM60ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:
www.st.com
Package mechanical data
11/19