STP9NK90Z STMicroelectronics, STP9NK90Z Datasheet - Page 3

• Manufacturer Part Number: STP9NK90Z
• Description: MOSFET N-CH 900V 8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STP9NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 160000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.3Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2785-5

STB9NK90Z, STF9NK90Z, STP9NK90Z, STW9NK90Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Symbol
Symbol
R
Symbol
dv/dt
I
SD
P
V
DM
R
V
thj-case
V
T
E
T
I
I
TOT
I
ISO
GS
thj-a
T
DS
stg
AR
D
D
AS
J
(2)
l
(3)
≤ 10 A, di/dt ≤ 200 A/µs,V
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
Single pulse avalanche energy (starting Tj=25 °C,
I
D
= I
AR
C
, V
=25°C)
DD
= 50 V)
Parameter
Parameter
DD
Doc ID 9479 Rev 7
C
(see Figure 22)(see Figure 23)
= 25 °C
≤ V
Parameter
GS
(BR)DSS
= 0)
C
C
=100 °C
= 25 °C
, T
j
≤ T
Jmax.
TO-220, D²PAK
TO-220
D²PAK
0.78
TO-247
1.28
160
32
--
8
5
62.5
-55 to 150
TO-220FP TO-247
Value
± 30
900
Value
4.5
300
4
3.1
Value
300
Electrical ratings
TO-220FP
8
2500
32
0.32
8
5
40
(1)
(1)
0.78
(1)
50
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
KV
mJ
°C
W
°C
V
V
A
A
A
V
A
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