STP200NF04L STMicroelectronics, STP200NF04L Datasheet - Page 6
![MOSFET N-CH 40V 120A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP200NF04L
Manufacturer Part Number
STP200NF04L
Description
MOSFET N-CH 40V 120A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STB200NF04L.pdf
(12 pages)
Specifications of STP200NF04L
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.8 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 m Ohms
Forward Transconductance Gfs (max / Min)
60 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
80 ns
Minimum Operating Temperature
- 55 C
Rise Time
270 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4819-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP200NF04L
Manufacturer:
ST
Quantity:
25 000
Company:
Part Number:
STP200NF04L
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP200NF04L
Manufacturer:
RUICHIPS
Quantity:
20 000
STP200NF04L - STB200NF04L - STB200NF04L-1
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Figure 15: Unclamped Inductive Load Test Cir-
cuit
Figure 16: Switching Times Test Circuit For
Resistive Load
Figure 17: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 18: Unclamped Inductive Wafeform
Figure 19: Gate Charge Test Circuit