STP14NM50N STMicroelectronics, STP14NM50N Datasheet - Page 16

• Manufacturer Part Number: STP14NM50N
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10650-5

Package mechanical data
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Table 12.
Dim.
D1
A1
A2
E1
V2
b4
c2
e1
L1
L2
L4
D
H
R
A
E
b
c
e
L
DPAK (TO-252) mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0°
1
STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
Doc ID 16832 Rev 4
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
mm
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8°
1