STP14NM50N STMicroelectronics, STP14NM50N Datasheet - Page 9

• Manufacturer Part Number: STP14NM50N
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10650-5

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
3
Figure 17. Switching times test circuit for
Figure 19. Test circuit for inductive load
Figure 21. Unclamped inductive waveform
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Test circuits
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Doc ID 16832 Rev 3
1000
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AM01472v1
AM01470v1
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Figure 18. Gate charge test circuit
Figure 20. Unclamped inductive load test
Figure 22. Switching time waveform
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