STP80NF55L-06 STMicroelectronics, STP80NF55L-06 Datasheet - Page 4

• Manufacturer Part Number: STP80NF55L-06
• Description: MOSFET N-CH 55V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF55L-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 136nC @ 5V
• Input Capacitance (ciss) @ Vds: 4850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0065 Ohms
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5898-5; STP80NF55L-06

STB80NF55L-06 STP80NF55L-06
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
4/10
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations