STP60NF10 STMicroelectronics, STP60NF10 Datasheet - Page 5

• Manufacturer Part Number: STP60NF10
• Description: MOSFET N-CH 100V 80A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP60NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 104nC @ 10V
• Input Capacitance (ciss) @ Vds: 4270pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 78 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.023Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4384-5

STB60NF10 - STB60NF10 -1 - STP60NF10
Table 5.
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
t
t
d(on)
d(off)
RRM
I
SD
Q
SD
t
t
t
rr
r
f
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100A/µs,
V
Figure 15 on page 8
SD
SD
V
R
Figure 13 on page 8
DD
DD
G
= 80A, V
= 80A,
=4.7Ω, V
= 25V, T
Test conditions
= 50V, I
Test conditions
GS
D
J
GS
= 40A,
= 150°C
= 0
=10V
Min.
Min
Electrical characteristics
Typ.
Typ.
340
7.4
92
17
56
82
23
Max.
Max
320
1.3
80
Unit
Unit
nC
ns
ns
ns
ns
ns
A
A
V
A
5/15