IXTH120P065T IXYS, IXTH120P065T Datasheet - Page 6

• Manufacturer Part Number: IXTH120P065T
• Description: MOSFET P-CH 65V 120A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH120P065T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 65V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 13200pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -65
• Id(cont), Tc=25°c, (a): -120
• Rds(on), Max, Tj=25°c, (?): 0.01
• Ciss, Typ, (pf): 13200
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 53
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTA120P065T IXTH120P065T
IXTP120P065T
Fig. 19. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_120P065T(A6)11-08-10-A