IXTH120P065T IXYS, IXTH120P065T Datasheet - Page 3

• Manufacturer Part Number: IXTH120P065T
• Description: MOSFET P-CH 65V 120A TO-247
• Manufacturer: IXYS
• Series: TrenchP™r

Specifications of IXTH120P065T

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 65V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 13200pF @ 25V
• Power - Max: 298W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -65
• Id(cont), Tc=25°c, (a): -120
• Rds(on), Max, Tj=25°c, (?): 0.01
• Ciss, Typ, (pf): 13200
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): 53
• Trr, Max, (ns): -
• Pd, (w): 298
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
-120
-100
-120
-100
-80
-60
-40
-20
-80
-60
-40
-20
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0
0
0
V
-0.2
GS
= -10V
-0.2
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. R
-60
-0.4
-0.4
-0.6
DS(on)
-120
V
V
GS
GS
-0.8
= -10V
Drain Current
Normalized to I
= -10V
-0.6
I
- 9V
- 8V
D
V
- 9V
- 8V
V
DS
- Amperes
DS
-180
- Volts
-1
- Volts
-0.8
-1.2
-240
- 7V
- 6V
- 5V
D
T
-1.4
= - 60A vs.
J
-1
= 125ºC
J
J
= 125ºC
= 25ºC
- 7V
- 5V
- 6V
T
-1.6
J
-300
= 25ºC
-1.2
-1.8
-1.4
-360
-2
-350
-300
-250
-200
-150
-100
-50
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-140
-120
-100
-80
-60
-40
-20
0
-50
0
0
-50
V
GS
Fig. 2. Extended Output Characteristics @ T
V
= -10V
GS
-2
-25
= -10V
-25
IXTA120P065T IXTH120P065T
Fig. 4. R
- 9V
-4
Fig. 6. Maximum Drain Current vs.
0
0
- 8V
- 6V
-6
DS(on)
- 7V
- 5V
Junction Temperature
T
T
Case Temperature
25
J
J
25
Normalized to I
- Degrees Centigrade
- Degrees Centigrade
-8
V
DS
-10
50
- Volts
50
IXTP120P065T
-12
75
75
I
D
D
= -120A
-14
= - 60A vs.
100
100
I
-16
D
= - 60A
J
= 25ºC
125
125
-18
150
-20
150